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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002/D Designer'sTM Data Sheet SWITCHMODETM NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18002 have an applications specific state-of-the-art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following: * Improved Efficiency Due to Low Base Drive Requirements: -- High and Flat DC Current Gain hFE -- Fast Switching -- No Coil Required in Base Circuit for Turn-Off (No Current Tail) * Tight Parametric Distributions are Consistent Lot-to-Lot * Two Package Choices: Standard TO-220 or Isolated TO-220 * MJF18002, Case 221D, is UL Recognized at 3500 VRMS: File #E69369 MAXIMUM RATINGS Rating Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current -- Continuous -- Peak(1) Base Current -- Continuous -- Peak(1) RMS Isolated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25C) Total Device Dissipation Derate above 25C Operating and Storage Temperature Test No. 1 Per Fig. 1 Test No. 2 Per Fig. 2 Test No. 3 Per Fig. 3 (TC = 25C) Symbol VCEO VCES VEBO IC ICM IB IBM VISOL -- -- -- 50 0.4 MJE18002 MJF18002 Unit Vdc Vdc Vdc Adc Adc 4500 3500 1500 25 0.2 V 450 1000 9.0 2.0 5.0 1.0 2.0 MJE18002* MJF18002* *Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS CASE 221A-06 TO-220AB MJE18002 PD TJ, Tstg Symbol RJC RJA TL Watts W/C C - 65 to 150 THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds MJE18002 2.5 62.5 260 MJF18002 5.0 62.5 Unit C/W C CASE 221D-02 ISOLATED TO-220 TYPE UL RECOGNIZED MJF18002 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 800 V, VEB = 0) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. (2) Proper strike and creepage distance must be provided. TC = 125C TC = 125C VCEO(sus) ICEO ICES 450 -- -- -- -- -- -- -- -- -- -- -- -- 100 100 500 100 100 Vdc Adc Adc Symbol Min Typ Max Unit IEBO Adc (continued) Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer's and SWITCHMODE are trademarks of Motorola, Inc. REV 1 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 MJE18002 MJF18002 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic ON CHARACTERISTICS Base-Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) Base-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) Collector-Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) @ TC = 125C (IC = 1.0 Adc, IB = 0.2 Adc) @ TC = 125C DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc) @ TC = 125C DC Current Gain (IC = 0.4 Adc, VCE = 1.0 Vdc) @ TC = 125C DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc) @ TC = 125C DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 8.0 V) Dynamic Saturation: determined 1.0 s and 3.0 s after rising IB1 reach 0.9 final IB1 (see Figure 18) IC = 0.4 A IB1 = 40 mA VCC = 300 V IC = 1.0 A IB1 = 0.2 A VCC = 300 V 1.0 s 3.0 s 1.0 s 3.0 s @ TC = 125C @ TC = 125C @ TC = 125C @ TC = 125C ton @ TC = 125C toff @ TC = 125C ton @ TC = 125C toff @ TC = 125C tfi @ TC = 125C tsi @ TC = 125C Crossover Time @ TC = 125C Fall Time Storage Time @ TC = 125C Crossover Time @ TC = 125C Fall Time Storage Time @ TC = 125C Crossover Time @ TC = 125C tc IC = 0.4 Adc, IB1 = 50 mAdc, IB2 = 50 mAdc tfi @ TC = 125C tsi tc IC = 1.0 Adc, IB1 = 0.2 Adc, IB2 = 0.5 Adc tfi @ TC = 125C tsi tc fT Cob Cib VCE(dsat) -- -- -- -- -- -- -- -- -- -- -- 13 35 400 3.5 8.0 1.5 3.8 8.0 14 2.0 7.0 -- 60 600 -- -- -- -- -- -- -- -- MHz pF pF Vdc hFE VBE(sat) VCE(sat) -- -- -- -- 14 -- 11 11 6.0 5.0 10 0.2 0.2 0.25 0.3 -- 27 17 20 8.0 8.0 20 0.5 0.5 0.5 0.6 34 -- -- -- -- -- -- -- -- -- 0.825 0.92 1.1 1.25 Vdc Vdc Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) Turn-On Time Turn-Off Time Turn-On Time Turn-Off Time IC = 0.4 Adc IB1 = 40 mAdc IB2 = 0.2 Adc VCC = 300 V IC = 1.0 Adc IB1 = 0.2 Adc IB2 = 0.5 Adc VCC = 300 V -- -- -- -- -- -- -- -- 200 130 1.2 1.5 85 95 1.7 2.1 300 -- 2.5 -- 150 -- 2.5 -- ns s ns s SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) Fall Time Storage Time IC = 0.4 Adc, IB1 = 40 mAdc, IB2 = 0.2 Adc -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 125 120 0.7 0.8 110 110 110 120 1.7 2.25 200 250 140 185 2.2 2.5 140 220 200 -- 1.25 -- 200 -- 175 -- 2.75 -- 300 -- 200 -- 3.0 -- 250 -- ns s ns ns s ns ns s ns 2 Motorola Bipolar Power Transistor Device Data MJE18002 MJF18002 TYPICAL STATIC CHARACTERISTICS 100 TJ = 125C VCE = 1 V h FE, DC CURRENT GAIN 100 TJ = 125C TJ = 25C VCE = 5 V h FE, DC CURRENT GAIN TJ = 25C 10 10 TJ = - 20C 1 0.01 0.01 0.10 1.00 0.10 1.00 IC, COLLECTOR CURRENT (AMPS) 10.00 10.00 1 0.01 0.01 0.10 1.00 0.10 1.00 IC, COLLECTOR CURRENT (AMPS) 10.00 10.00 Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volts 2 TJ = 25C V CE , VOLTAGE (VOLTS) 10.00 V CE , VOLTAGE (VOLTS) 1.00 1 2A 1.5 A 1A 0.4 A 0 0.001 0.001 IC = 0.2 A 0.010 0.100 0.010 0.100 IB, BASE CURRENT (mA) 1.000 1.000 0.10 IC/IB = 10 IC/IB = 5 0.01 0.01 0.01 TJ = 25C TJ = 125C 0.10 1.00 0.10 1.00 IC, COLLECTOR CURRENT (AMPS) 10.00 10.00 Figure 3. Collector Saturation Region Figure 4. Collector-Emitter Saturation Voltage 1.1 1.0 V BE, VOLTAGE (VOLTS) C, CAPACITANCE (pF) 0.9 0.8 TJ = 25C 0.7 0.6 TJ = 125C 0.5 0.4 0.01 0.01 IC/IB = 10 IC/IB = 5 0.10 1.00 0.10 1.00 IC, COLLECTOR CURRENT (AMPS) 10.00 10.00 1000 Cib 100 TJ = 25C f = 1 MHz 10 Cob 1 1 1 10 100 10 100 VCE, COLLECTOR-EMITTER (VOLTS) 1000 1000 Figure 5. Base-Emitter Saturation Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3 MJE18002 MJF18002 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 2500 IB(off) = IC/2 VCC = 300 V PW = 20 s t, TIME (ns) TJ = 125C IC/IB = 5 IC/IB = 10 4500 4000 3500 3000 t, TIME (ns) 1500 2500 2000 1500 1000 500 0 0.4 0.4 0.6 0.6 0.8 1.0 1.2 1.4 1.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 1.8 2.0 2.0 0 0.4 0.4 0.6 0.6 0.8 1.0 1.2 1.4 1.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 1.8 2.0 2.0 IC/IB = 10 TJ = 25C TJ = 125C IC/IB = 5 IB(off) = IC/2 VCC = 300 V PW = 20 s 2000 1000 TJ = 25C 500 Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff 3000 2500 2000 t, TIME (ns) 1500 1000 500 0 0.4 0.4 IC/IB = 10 TJ = 25C TJ = 125C 1.8 1.8 2.0 2.0 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 2500 IC = 1 A t si, STORAGE TIME (ns) IC/IB = 5 2000 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 1500 1000 500 IC = 0.4 A TJ = 25C TJ = 125C 9 11 9 11 hFE, FORCED GAIN 13 13 15 15 0.6 0.6 0.8 1.0 1.2 1.4 1.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 0 5 5 7 7 Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time 600 500 400 t, TIME (ns) 300 200 100 0 0.4 tc tfi TJ = 25C TJ = 125C 0.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 1.8 2.0 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H tc 450 400 350 300 t, TIME (ns) tfi 250 200 150 100 50 0 0.4 0.6 tfi tc IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H TJ = 25C TJ = 125C tc tfi 0.8 1.0 1.2 1.4 1.6 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 1.8 2.0 Figure 11. Inductive Switching, tc & tfi, IC/IB = 5 Figure 12. Inductive Switching, tc & tfi, IC/IB = 10 4 Motorola Bipolar Power Transistor Device Data MJE18002 MJF18002 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 180 160 140 IC = 0.4 A 120 100 80 60 5 5 TJ = 25C TJ = 125C 6 6 7 7 8 8 9 10 11 9 10 11 hFE, FORCED GAIN 12 12 13 13 14 14 15 15 IC = 1 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 250 230 210 TC, CROSS-OVER TIME (ns) 190 170 150 130 110 90 70 50 5 5 6 IC = 0.4 A TJ = 25C TJ = 125C 7 7 8 11 9 10 11 hFE, FORCED GAIN 12 13 14 15 IC = 1 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H t fi , FALL TIME (ns) Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION 10.00 5 ms I C, COLLECTOR CURRENT (AMPS) DC (MJE18002) 1.00 DC (MJF18002) 1 ms 2.5 50 s 10 s 1 s I C, COLLECTOR CURRENT (AMPS) 2.0 TC 125C IC/IB 4 LC = 500 H 1.5 1.0 0.10 0.5 0V 0 0 VBE(off) = 0.5 V -1.5 V 600 800 1000 200 400 800 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1200 0.01 10 10 100 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 1000 Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on T C = 25C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figures 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 1.0 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.8 0.6 0.4 THERMAL DERATING 0.2 0 20 40 60 80 100 120 120 TC, CASE TEMPERATURE (C) 140 140 160 Figure 17. Forward Bias Power Derating Motorola Bipolar Power Transistor Device Data 5 MJE18002 MJF18002 5 4 3 2 1 VOLTS 0 -1 -2 -3 -4 -5 0 IB 1 2 90% IB 1 s 3 s 3 4 TIME 5 6 7 8 VCE dyn 1 s dyn 3 s 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 VCLAMP 10% VCLAMP IC tsi TC 10% IC 90% IC tfi Figure 18. Dynamic Saturation Voltage Measurements Figure 19. Inductive Switching Measurements +15 V 1 F 150 3V 100 3V MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 MJE210 COMMON 500 F 150 3V MTP12N10 Rb2 V(BR)CEO(sus) L = 10 H RB2 = VCC = 20 VOLTS IC(pk) = 100 mA IB2 INDUCTIVE SWITCHING L = 200 H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Iout IB Rb1 IB1 VCE IC PEAK 1 F -Voff Table 1. Inductive Load Switching Drive Circuit 6 Motorola Bipolar Power Transistor Device Data MJE18002 MJF18002 TYPICAL THERMAL RESPONSE r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.00 0.5 0.2 0.1 0.10 0.05 P(pk) 0.02 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.10 1.00 t, TIME (ms) 10.00 RJC(t) = r(t) RJC RJC = C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100.00 1000.00 Figure 20. Typical Thermal Response (ZJC(t)) for MJE18002 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.00 0.5 0.2 0.10 0.1 0.02 RJC(t) = r(t) RJC RJC = C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 1.00 10.00 t, TIME (ms) 100.00 SINGLE PULSE 0.01 0.01 0.10 1000.00 10000.00 100000.00 Figure 21. Typical Thermal Response (ZJC(t)) for MJF18002 Motorola Bipolar Power Transistor Device Data 7 MJE18002 MJF18002 TEST CONDITIONS FOR ISOLATION TESTS* MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS CLIP CLIP 0.107 MIN 0.107 MIN HEATSINK 0.110 MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 HEATSINK HEATSINK Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4-40 SCREW PLAIN WASHER CLIP HEATSINK COMPRESSION WASHER NUT HEATSINK Figure 23a. Screw-Mounted Figure 23b. Clip-Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. 8 Motorola Bipolar Power Transistor Device Data MJE18002 MJF18002 PACKAGE DIMENSIONS B 4 F C T A S -T- SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Q 123 H K Z L V G D N U R J DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y -T- F Q A 123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 -B- C S U H K -Y- G N L D 3 PL M J R 0.25 (0.010) B M Y STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 221D-02 (ISOLATED TO-220 TYPE) UL RECOGNIZED: FILE #E69369 ISSUE D Motorola Bipolar Power Transistor Device Data 9 MJE18002 MJF18002 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 10 Motorola Bipolar Power Transistor Device Data *MJE18002/D* MJE18002/D |
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